尊敬的客户:为给您持续提供一对一优质服务,即日起,元器件订单实付商品金额<300元时,该笔订单按2元/SKU加收服务费,感谢您的关注与支持!
    首页产品索引VN0606

    VN0606

    购买收藏
    MOSFET, N-CHANNEL ENHANCEMENT-MODE, 60V, 3.0 Ohm

     

    产品信息

    This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure andwell-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

      Free from secondary breakdown

      Low power drive requirement

      Ease of paralleling

      Low CISS and fast switching speeds

      Excellent thermal stability

      Integral source-drain diode

      High input impedance and high gain

    电路图、引脚图和封装图

    在线购买

    型号制造商描述购买
    VN0606L-G-P003KOA贴片电阻 0805 270Ω ±5% 1/4W ±200ppm/℃ 立即购买
    VN0606L-GMaximIC OPAMP GP 4 CIRCUIT 14SOIC 立即购买

    技术资料

    标题类型大小(KB)下载
    SY_0606开发板的特性简PDF451 点击下载
    G0606M-I光电二极管PDF264 点击下载
    VN2700系列视频编码器RAR899 点击下载
    2N6661/VN88AFD pdf datasheetRAR77 点击下载
    VN0088A_v1.3数据手册PDF410 点击下载
    G2S06510A 兼容C3D10060A C3D06065APDF1693 点击下载
    伺服驱动器VN维护和检查PDF171 点击下载
    VN2222 pdfRAR45 点击下载

    应用案例更多案例

    系列产品索引查看所有产品

    VN4012VN0109VP0808VP0106
    VP0808VP2110VP2106VP2206
    VN1206VN0106VP2206VP0109
    VN2450VP2450VP2106VN0550
    VP0106VP0550VN2410VP0104
    Copyright ©2012-2024 hqchip.com.All Rights Reserved 粤ICP备14022951号工商网监认证 工商网监 营业执照