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    首页产品索引TP2510

    TP2510

    购买收藏
    MOSFET, P-CHANNEL ENHANCEMENT-MODE, -100V, 3.5 Ohm

    制造商:Microchip

    中文数据手册

    产品信息

    This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure andwell-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

      Low threshold (-2.4V max.)

      High inputimpedance

      Low input capacitance (125pF max.)

      Fast switching speeds

      Low on-resistance

      Free from secondary breakdown

      Low input and output leakage

    电路图、引脚图和封装图

    在线购买

    型号制造商描述购买
    TP2510N8-GMicrochipMOSFET P-CH 100V 0.48A SOT89-3 立即购买

    应用案例更多案例

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