TC6321 is derived from the TC6320, with its high voltage, low threshold N-channel and P-channel MOSFETs, but offered in a thermally enhanced 5mm x 6mm DFN, with better thermal transfer and higher operating range, to 175°C.  Both MOSFETs have integrated GATE-to-SOURCE resistors and GATE-to-SOURCE Zener diode clamps which are desired for high voltage pulser applications. It is a complimentary, high-speed, high voltage, GATE-clamped N- and P-channel MOSFET pair, which utilizes an advanced vertical DMOS structure andwell-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

  Derived from the TC6320

  Thermally enhanced 5mm x 6mm DFN

  Rated to 175°C  

  Integrated GATE-to-SOURCE resistor

  Integrated GATE-to-SOURCE Zener diode

  Low threshold

  Low on-resistance

  Low input capacitance

  Fast switching speeds

  Free from secondary breakdown

  Low input and output leakage

  Independent, electrically isolated N- and P-channels