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    首页产品索引TN0104

    TN0104

    购买收藏
    MOSFET, N-CHANNEL ENHANCEMENT-MODE, 40V, 1.8 Ohm

     

    产品信息

    This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure andwell-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

      Low threshold (1.6V max.)

      High input impedance

      Low input capacitance

      Fast switching speeds

      Low on-resistance

      Free from secondary breakdown

      Low input and output leakage

    电路图、引脚图和封装图

    在线购买

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    应用案例更多案例

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