尊敬的客户:为给您持续提供一对一优质服务,即日起,元器件订单实付商品金额<300元时,该笔订单按2元/SKU加收服务费,感谢您的关注与支持!
    首页产品索引FFSH15120A

    FFSH15120A

    购买收藏
     SiC Diode, 1200V, 15A, TO-247-2

    制造商:ON

    中文数据手册

    产品信息

    Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
    • Max Junction Temperature 175 °C
    • Avalanche Rated 145 mJ
    • High Surge Current Capacity
    • Positive Temperature Coefficient
    • Ease of Paralleling
    • No Reverse Recovery / No Forward Recovery

    在线购买

    型号制造商描述购买
    FFSH15120A-- 立即购买

    技术资料

    标题类型大小(KB)下载
    TO-247-2LDPDF80 点击下载
    Silicon Carbide Schottky DiodePDF821 点击下载
    FFSH15120A_PSPICERAR15 点击下载
    FFSH15120A_SIMETRIXRAR23 点击下载

    应用案例更多案例

    系列产品索引查看所有产品

    FODM3053_NF098FSCQ1565RTFPF12045FFSP08120A
    FNA51560TD3FSL156MRBNFDC6392SFPF2003
    FGH60N60UFDFL7930BFGA40T65SHDFFSQ100
    FAN48632FAN7191_F085FJV4102RFAN54046
    FAN3268T_F085FERD30SM100DJFFSD146MRBNFSB70250
    Copyright ©2012-2024 hqchip.com.All Rights Reserved 粤ICP备14022951号工商网监认证 工商网监 营业执照