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    首页产品索引FFSD08120A

    FFSD08120A

    购买收藏
     SiC Diode - 1200V, 8A, DPAK

    制造商:ON

    中文数据手册

    产品信息

    Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
    • Max Junction Temperature 175 °C
    • High Surge Current Capacity
    • Positive Temperature Coefficient
    • Ease of Paralleling
    • No Reverse Recovery / No Forward Recovery

    在线购买

    型号制造商描述购买
    FFSD08120A-- 立即购买

    技术资料

    标题类型大小(KB)下载
    DPAK3 (TO-252 3 LD)PDF152 点击下载
    Silicon Carbide Schottky DiodePDF308 点击下载
    FFSD08120A_PspiceRAR14 点击下载
    FFSD08120A_SIMetrixRAR23 点击下载

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