This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure andwell-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Low threshold (1.6V max.)
High input impedance
Low input capacitance (125pF max.)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
TN2504 封装图
型号 | 制造商 | 描述 | 购买 |
---|---|---|---|
TN2504N8-G | Aker | 无源晶振 20MHz 12pF 45Ω ±15ppm -20℃~+70℃ SMD7050_4P | 立即购买 |
计讯物联北斗GNSS接收机TN521,微米级高精度位移形变监测,支持GPSL1/L2,BDB1/B2,支持北斗三代多频段,支持串口裂缝、压力、应力、倾角、加速度、舞动传感器有线接入,支持数据采集
旗捷推出适用于兄弟激光TN229/TN2510系列通用耗材芯片。该产品由旗捷自主研发,支持容量定制,采用多序列号方案支持序列号切换。
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