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    首页产品索引TN0610

    TN0610

    购买收藏
    MOSFET, N-CHANNEL ENHANCEMENT-MODE, 100V, 1.5 Ohm

     

    产品信息

    This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure andwell-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

      Low threshold - 2.0V max.

      High input impedance

      Low input capacitance - 100pF typical

      Fast switching speeds

      Low on-resistance

      Free from secondary breakdown

      Low input and output leakage

    电路图、引脚图和封装图

    在线购买

    型号制造商描述购买
    TN0610N3-G-P003VENKEL贴片电阻 0603 330KΩ ±0.5% 1/16W ±25ppm/℃ 立即购买
    TN0610N3-G-P013EDAC895 SERIES (.100" (2.54MM) CONTA 立即购买
    TN0610N3-GKnowles贴片电容(MLCC) 1210 270pF ±1% 1KV C0G(NP0) 立即购买

    应用案例更多案例

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