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    首页产品索引TN5325

    TN5325

    购买收藏
    MOSFET, N-CHANNEL ENHANCEMENT-MODE, 250V, 7.0 Ohm

     

    产品信息

    This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure andwell-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

      Low threshold (2.0V max.)

      High input impedance and high gain

      Free from secondary breakdown

      Low CISS and fast switching speeds

    电路图、引脚图和封装图

    在线购买

    型号制造商描述购买
    TN5325N3-G-P002Vishay贴片电阻 0505 47Ω ±2% 1.4W ±150ppm/℃ 立即购买
    TN5325N3-GSUNTSU无源晶振 18pF 30MHz 30Ω ±25ppm HC-49S/SMD -10℃~+70℃ 立即购买
    TN5325N8-GMarktech OptoelectronicsLED RING BLUE 450NM 立即购买
    TN5325K1-GDialightPWRWHT LV NW WIDE OPTIC 立即购买

    技术资料

    标题类型大小(KB)下载
    EL5325/EL5325A pdf datasheet (RAR433 点击下载
    GC5325,pdf(GC5325 Wideband DigRAR462 点击下载
    GC5325 wideband digital pre-diRAR3000 点击下载
    GC5325 System Evaluation Kit URAR2661 点击下载
    EL5325 pdf datasheet (12-ChannRAR433 点击下载
    GC5325 System Evaluation KitRAR1874 点击下载
    GC5325 Envelope TrackingRAR1537 点击下载
    MSP430F5325,pdf(Mixed Signal MRAR673 点击下载

    应用案例更多案例

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