尊敬的客户:为给您持续提供一对一优质服务,即日起,元器件订单实付商品金额<300元时,该笔订单按2元/SKU加收服务费,感谢您的关注与支持!
    首页产品索引TN0606

    TN0606

    购买收藏
    MOSFET, N-CHANNEL ENHANCEMENT-MODE, 60V, 1.5 Ohm

     

    产品信息

    This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure andwell-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

      Low threshold - 2.0V max.

      High input impedance

      Low input capacitance - 100pF typical

      Fast switching speeds

      Low on-resistance

      Free from secondary breakdown

      Low input and output leakage

    电路图、引脚图和封装图

    在线购买

    型号制造商描述购买
    TN0606N3-GLuminusEMITTER RED MODULE 立即购买

    应用案例更多案例

    系列产品索引查看所有产品

    TPA3128D2TPS62736TPS24770TL431
    TPSM846C23TLC3544T100ATPS53819A
    TN5335TPS4H160-Q1TCP-5056UBTCN75
    TC4426TN0610TPS40422TMP03
    TMM6263TPS3702TPIC2060ATLV2553-Q1
    Copyright ©2012-2024 hqchip.com.All Rights Reserved 粤ICP备14022951号工商网监认证 工商网监 营业执照