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    首页产品索引TC8020

    TC8020

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    SIX PAIR, N- AND P-CHANNEL ENHANCEMENT-MODE MOSFET

     

    产品信息

    TC8020 consists of six pairs of high voltage, low threshold N- and P-channel MOSFETs in a 56-lead QFN package. All MOSFETs have integrated gate-to-source resistors and gate-to-source Zener diode clamps which are desired for high voltage pulser applications. The complimentary, high-speed, high voltage, gate-clamped N- and P-channel MOSFET pairs utilize an advanced vertical DMOS structure andwell-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input and output capacitance, and fast switching speeds are desired.

      High voltage, vertical DMOS technology

      Integrated gate-to-source resistor

      Integrated gate-to-source Zener diode

      Typical peak output +/-3.5A at 50V

      Low threshold, low on-resistance

      Low input & output capacitance

      Fast switching speeds

      Electrically isolated N- and P-MOSFET pairs

    电路图、引脚图和封装图

    在线购买

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    TC8020K6-G-M937TE Connectivity AMP Connectors2266526-1 立即购买
    TC8020K6-GKnowles贴片电容(MLCC) 1210 270pF ±5% 1KV X7R 立即购买

    应用案例更多案例

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