Please consider this device
The SST12LP15A is a high-power and high-gain power amplifier based on the highly-reliable InGaP/GaAs HBT technology. Easily configured for high-power applications with superb power-added efficiency while operating over the 2.4-2.5 GHz frequency band, it typically provides 32 dB gain with 26% power-added efficiency @ POUT = 24 dBm for 802.11g and 27% power-added efficiency @ POUT = 25 dBm for 802.11b. The SST12LP15A has excellent linearity while meeting 802.11g spectrum mask at 25 dBm. The power amplifier IC features easy board-level usage along with high-speed power-up/down control and is offered in 16-contact VQFN package.
High Gain:– Typically 32 dB gain across 2.4–2.5 GHz over temperature 0°C to +85°C
High linear output power:– >29 dBm P1dB– Meets 802.11g OFDM ACPR requirement up to 25 dBm– Added EVM~4% up to 23 dBm for 54 Mbps 802.11g signal– Meets 802.11b ACPR requirement up to 25 dBm
High power-added efficiency/Low operating current for both 802.11g/b applications– ~26%/300 mA @ POUT = 24 dBm for 802.11g– ~27%/350 mA @ POUT = 25 dBm for 802.11bApplications:
WLAN (IEEE 802.11b/g/n)
Home RF
Cordless phones
2.4 GHz ISM wireless
SST12LP15A 封装图
型号 | 制造商 | 描述 | 购买 |
---|---|---|---|
SST12LP15A-QVCE | AOS | MOSFET N-CH 30V 25A TO-252 | 立即购买 |
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