The SST12LP08 is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology. Easily configured for high-power applications with good power-added efficiency while operating over the 2.4- 2.5 GHz frequency band, it typically provides 30 dB gain with 34% power-added efficiency . The SST12LP08 has excellent linearity while meeting 802.11g spectrum mask at 23.5 dBm. The SST12LP08 also features easy board-level usage along with high-speed power-up/down control through a single combined reference voltage pin and is offered in both 12-contact XQFN and 6-contact XSON packages.
High Gain:– Typically 30 dB gain across 2.4~2.5 GHz over temperature0°C to +85°C
High linear output power:– >28 dBm P1dB– Meets 802.11g OFDM ACPR requirement up to 23.5 dBm– ~3% added EVM up to 20 dBm for 54 Mbps 802.11g signal– Meets 802.11b ACPR requirement up to 23.5 dBm
High power-added efficiency/Low operating current for both 802.11g/b applications– ~34%/200 mA@POUT = 23.5 dBm for 802.11b/gApplications:
WLAN (IEEE 802.11b/g/n)
Home RF
Cordless phones
2.4 GHz ISM wireless
SST12LP08 封装图
SST12LP08 封装图
型号 | 制造商 | 描述 | 购买 |
---|---|---|---|
SST12LP08-QXBE | Infineon | MOSFET N-CH 75V 56A I-PAK | 立即购买 |
SST12LP08-QX6E | ROHM | MOSFET N-CH 200V 12A LPT | 立即购买 |
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