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    首页产品索引NXH80B120H2Q0SG

    NXH80B120H2Q0SG

    购买收藏
     Power Integrated Module, SiC Diode + IGBT, 1200 V, 40 A

    制造商:ON

    产品信息

    The NXH80B120L2Q0SG is a power module containing a dual boost stage consisting of two 40A/1200V IGBTs, two 15A/1200V SiC diodes,and two 25A/1600V anti-parallel diodes for the IGBTs. Two additional 25A/1600V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.
    • IGBT Specifications: VCE(SAT) = 2.2 V, ESW = 2180 uJ
    • 25 A / 1600 V Bypass and Anti−parallel Diodes
    • SiC Rectifier Specification: VF = 1.4 V
    • Solderable Pins
    • Dual Boost 40 A / 1200 V IGBT + SiC Rectifier Hybrid Module
    • Thermistor

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    型号制造商描述购买
    NXH80B120H2Q0SG-- 立即购买

    技术资料

    标题类型大小(KB)下载
    Dual Boost Power ModulePDF156 点击下载
    PIM22, 55x32.5 / Q0BOOSTPDF65 点击下载

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