尊敬的客户:为给您持续提供一对一优质服务,即日起,元器件订单实付商品金额<300元时,该笔订单按2元/SKU加收服务费,感谢您的关注与支持!
    首页产品索引FFSP0665A

    FFSP0665A

    购买收藏
     SiC Diode - 650V, 6A, TO-220-2

    制造商:ON

    中文数据手册

    产品信息

    Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
    • Max Junction Temperature 175 °C
    • High Surge Current Capacity
    • Positive Temperature Coefficient
    • No Reverse Recovery / No Forward Recovery

    在线购买

    型号制造商描述购买
    FFSP0665A-- 立即购买

    技术资料

    标题类型大小(KB)下载
    TO-220-2LDPDF32 点击下载
    Silicon Carbide Schottky DiodePDF412 点击下载
    FFSP0665A_LTspiceRAR57 点击下载
    FFSP0665A_SimetrixRAR18 点击下载

    应用案例更多案例

    系列产品索引查看所有产品

    FFSP20120AFAN4860FAN53601FSA551
    FAN604HFDMF6706CFSL137MRINFAN3278
    FGH40T65SHDFMS6501AFPF1038FPF2003
    FGH40T65UPDFERD40U50CFAN7930BFSQ0765RQ
    FNB80560T3FFSH15120ADNFYPF2010DNFS7140
    Copyright ©2012-2024 hqchip.com.All Rights Reserved 粤ICP备14022951号工商网监认证 工商网监 营业执照