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    首页产品索引DN3135

    DN3135

    购买收藏
    MOSFET, DEPLETION-MODE, 350V, 35 Ohm

     

    产品信息

    DN3135 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure andwell-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

      High input impedance

      Low input capacitance

      Fast switching speeds

      Low on-resistance

      Free from secondary breakdown

      Low input and output leakage

    电路图、引脚图和封装图

    在线购买

    型号制造商描述购买
    DN3135N8-G-- 立即购买
    DN3135K1-G-- 立即购买

    技术资料

    标题类型大小(KB)下载
    FM3135 datasheet pdf ,IntegratRAR265 点击下载
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    应用案例更多案例

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