DN2625 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.The DN2625DK6-G contains two MOSFETs in an 8-lead, dual pad DFN package. The DN2625K6-G in the 14-lead QFN package is not recommended for new designs, but may continue to be purchased for existing designs.

  Very low gate threshold voltage

  Designed to be source-driven

  Low switching losses

  Low effective output capacitance

  Designed for inductive loads

  Well matched for low second harmonic when driven byMD2130