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    首页产品索引DN2450

    DN2450

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    MOSFET, DEPLETION-MODE, 500V, 10 Ohm

     

    产品信息

    These low threshold depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure andwell-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

      High input impedance

      Low input capacitance

      Fast switching speeds

      Low on-resistance

      Free from secondary breakdown

      Low input and output leakage

    电路图、引脚图和封装图

    在线购买

    型号制造商描述购买
    DN2450N8-GBivarLEDENGINEP32004100K48"STRIP 立即购买
    DN2450K4-GBivarLEDENGINEP32006500K48"STRIP 立即购买

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