The MCP14A0051 and MCP14A0052 are inverting and non-inverting, 500mA MOSFET drivers in 2x2 DFN and SOT-23 packages. These high-speed MOSFET drivers allow controllers and MCUs to quickly charge and discharge capacitive loads. The small package sizes allow the gate driver to be positioned close to the MOSFET's physical gate connection, which minimizes gate bounce caused by the parasitic effects of PCB layout and reduces EMI. Rise time, fall time, propagation delay and cross-conduction current are all minimized. In addition, these devices feature a unique architecture with low input thresholds, ideally suited for use with a low-voltage MCU to minimize power losses within the system.
High Peak Output Current: 0.5 A (typical)
Wide Input Supply Voltage Operating Range: 4.5 V to 18 V
Low Shoot-Through/Cross-Conduction Current in Output Stage
High Capacitive Load Drive Capability:
1000 pF in 40 ns (typical
Short Delay Times: 33 ns (tD1), 24 ns (tD2) (typical)
Low Supply Current: 375 μA (typical)
Low Voltage Threshold Input and Enable with Hysteresis: 1.2 to 1.6 V
Latch-Up Protected: Withstands 500 mA Reverse Current
Space-Saving Packages:
6L SOT-23
6L 2x2 DFN
在本教程中,我们将DAC MCP4921 与 Microchip PIC16F877A 接口以进行数模转换。
当前给定的MCP的概念为:MCP是在一个塑料封装外壳内,垂直堆叠大小不同的各类存储器或非存储器芯片,是一种一级单封装的混合技术,用此方法节约小巧印刷电路板PCB空间。
产品特点 传输时间扩展 40ps; 抗磁性3T; 光电阴极Hi-QE; 门控可选; 8mm、16mm或18mm使用直径。 技术信息 Photonis的MCP-PMT具有高线性度特性,在光电burst
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存储,一个简单的词汇,却保存了对于我们而言十分重要的数据。往期存储相关文章中,小编对对象存储、文件存储、云存储均有所阐述。为增加大家对存储的认识,本文将对MCP存储器以及MCP存储器的应用发展予以
T14A型低压
“基于标准化的设计,这些模块可以帮助降低LTE连接的成本,从而帮助企业通过物联网获得竞争优势,” AT&T物联网解决方案高级副总裁Chris Penrose说。“我们的客户将能够更有效地部署各种物联网解决方案,并升级到Cat-M1。
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