The LE25W81QE is a serial interface-compatible flash memory device with a 1M x 8-bit configuration. It uses a single 2.6 V power supply for both reading and writing (program and erase functions) and does not require a special power supply. As such, it can support on-board programming. It has three erase functions, each of which corresponds to the size of the memoryarea in which the data is to be erased at one time: the small sector (4K bytes) erase function, the sector (64K bytes) erase function, and the chip erase function (for erasing all the data together). The memory space can be efficiently utilized by selecting one of these functions depending on theapplication. A page program method is supported for data writing. The page program method of LE25W81QE can program any amount of data from 1 to 256 bytes. This IC incorporates ON Semi’s unique high-speed programming function which enables fast 0.3 ms (typ) page program time. The program time of 1.5 s (typ) when programming 8-Mbit full-memory space makes for fast data writing when the chip erase function is used. While making the most of the features inherent to a serial flash memory device, the LE25W81QE is housed in an 8-pin ultra-miniature package. Serial flash memory devices tend to be at a disadvantage in terms of their read speed, but the LE25W81QE has maximally eliminated this speed-related disadvantage by supporting clocks with frequencies up to 50 MHz under SPI bus specifications. All these features make this device ideally suited to storing program codes in applications such as portable information devices and small disk systems, which are required to have increasingly more compact dimensions.

• Read/write operations enabled by single 2.6 V power supply :
• 2.45 to 3.6 V supply voltage range
• Operating frequency : 30 MHz
• Temperature range :
• –20 to +70°C (Read operation)
• 0 to +70°C (Write operation)
• Serial interface : SPI mode 0, mode 3 supported
• Sector size : 4K bytes/small sector, 64K bytes/sector
• Small sector erase, sector erase, chip erase functions
• Page program function (256 bytes / page)
• Block protect function
• Highly reliable read/write
• Number of rewrite times : 100,000 times
• Small sector erase time : 80 ms (typ), 300 ms (max)
• Sector erase time : 100 ms (typ), 400 ms (max)
• Chip erase time : 250 ms (typ), 3.0 s (max)
• Page program time : 0.3 ms/256 bytes (typ), 1 ms/256 bytes (max)
• Status functions : Ready/busy information, protect information
• Data retention period : 20 years