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    首页产品索引FFSP1265A

    FFSP1265A

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     SiC Diode - 650V, 12A, TO-220-2

    制造商:ON

    中文数据手册

    产品信息

    Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
    • Max Junction Temperature 175 °C
    • High Surge Current Capacity
    • Positive Temperature Coefficient
    • No Reverse Recovery / No Forward Recovery

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    型号制造商描述购买
    FFSP1265A-- 立即购买

    技术资料

    标题类型大小(KB)下载
    TO-220-2LDPDF32 点击下载
    Silicon Carbide Schottky DiodePDF415 点击下载
    FFSP1265A_LTspiceRAR57 点击下载
    FFSP1265A_PspiceRAR15 点击下载
    FFSP1265A_SimetrixRAR18 点击下载

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