尊敬的客户:为给您持续提供一对一优质服务,即日起,元器件订单实付商品金额<300元时,该笔订单按2元/SKU加收服务费,感谢您的关注与支持!
    首页产品索引FFSP1265A

    FFSP1265A

    购买收藏
     SiC Diode - 650V, 12A, TO-220-2

    制造商:ON

    中文数据手册

    产品信息

    Silicon Carbide (SiC) Schottky Diodes use a completely new technology thatprovides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermalperformance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
    • Max Junction Temperature 175 °C
    • High Surge Current Capacity
    • Positive Temperature Coefficient
    • No Reverse Recovery / No Forward Recovery

    在线购买

    型号制造商描述购买
    FFSP1265A-- 立即购买

    技术资料

    标题类型大小(KB)下载
    TO-220-2LDPDF32 点击下载
    Silicon Carbide Schottky DiodePDF415 点击下载
    FFSP1265A_LTspiceRAR57 点击下载
    FFSP1265A_PspiceRAR15 点击下载
    FFSP1265A_SimetrixRAR18 点击下载

    应用案例更多案例

    系列产品索引查看所有产品

    FSA839FSQ0170RNAFSL126MRTFAN2315AMPX
    FR014H5JZFAN48614FSB147HFPF2105
    FAN4800AUFCH099N65S3FSB50550BFAN5069
    FSBB20CH120DFGH12040WD_F155FSA2567FODM8061
    FS7145FDWS9509L_F085FDMC510PFAN4149
    Copyright ©2012-2024 hqchip.com.All Rights Reserved 粤ICP备14022951号工商网监认证 工商网监 营业执照