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    首页产品索引FDWS9509L_F085

    FDWS9509L_F085

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     P-Channel Logic Level Power Trench® MOSFET

    制造商:ON

    产品信息

    FDWS9509L_F085
    • Typical RDS(on) = 6.3 mΩ at VGS = -10V, ID = -65 A
    • Typical Qg(tot) = 48 nC at VGS = -10V, ID = -65 A
    • UIS Capability
    • RoHS Compliant
    • Qualified to AEC Q101
    • Wettable flanks for automatic optical inspection (AOI)

    在线购买

    型号制造商描述购买
    FDWS9509L-F085-- 立即购买

    技术资料

    标题类型大小(KB)下载
    DFN8 5.1x6.3, 1.27PPDF114 点击下载
    Using Fairchild Semiconductor Dual Cool™ MOSFETsPDF501 点击下载
    Maximum Power Enhancement Techniques for SuperSOT™-6 Power MOSFETsPDF319 点击下载
    Shielded Gate PowerTrench® MOSFET Datasheet ExplanationPDF1588 点击下载
    Analysis of MOSFET Failure Modes in LLC Resonant ConverterPDF1707 点击下载
    Driving and Layout Design for Fast Switching Super-Junction MOSFETsPDF2048 点击下载
    MOSFET BasicsPDF1159 点击下载
    Power MOSFET Avalanche GuidelinePDF557 点击下载

    应用案例更多案例

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