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    首页产品索引FDP8D5N10C

    FDP8D5N10C

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     N-Channel Shielded Gate PowerTrench

    制造商:ON

    中文数据手册

    产品信息

    This N-Channel MV MOSFET is produced using ON Semiconductor’s advanced PowerTrench
    process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.
    • Max RDS(on) = 8.5 mΩ at VGS = 10 V, ID = 76 A
    • High Performance Trench Technology for Extremely Low RDS(on)
    • Extremely Low Reverse Recovery Charge, Qrr
    • Low Gate Charge, QG = 25nC ( Typ.)
    • High Power and Current Handling Capability
    • 100% UIL Tested
    • RoHS Compliant

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    技术资料

    标题类型大小(KB)下载
    TO-220 3 LEAD STANDARDPDF30 点击下载
    N-Channel Shielded Gate PowerTrench MOSFETPDF969 点击下载

    应用案例更多案例

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