尊敬的客户:为给您持续提供一对一优质服务,即日起,元器件订单实付商品金额<300元时,该笔订单按2元/SKU加收服务费,感谢您的关注与支持!
    首页产品索引2N6661

    2N6661

    购买收藏
    MOSFET, N-CHANNEL ENHANCEMENT MODE, 90V, 4 Ohm

     

    产品信息

    2N6661 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

      Free from secondary breakdown

      Low power drive requirement

      Ease of paralleling

      Low CISS and fast switching speeds

      Excellent thermal stability

      Integral source-drain diode

      High input impedance and high gain

    电路图、引脚图和封装图

    在线购买

    型号制造商描述购买
    2N6661SiTime有源晶振 310MHz SMD5032_4P 立即购买

    应用案例更多案例

    系列产品索引查看所有产品

    2308-1DCGI2N605223S05-1HDCG24LC01BH
    2N305524LC014H2SB817C2SA2012
    2SB11242SA14192SC364923S05E-1HDCGI
    2SC5226A2308-1HPGG24c042SA2126
    2308-2DCG2N49222N7002T24LC16B
    Copyright ©2012-2024 hqchip.com.All Rights Reserved 粤ICP备14022951号工商网监认证 工商网监 营业执照