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    首页产品索引2N6660

    2N6660

    购买收藏
    MOSFET, N-CHANNEL ENHANCEMENT MODE, 60V, 3 Ohm

     

    产品信息

    2N6660 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

      Free from secondary breakdown

      Low power drive requirement

      Ease of paralleling

      Low CISS and fast switching speeds

      Excellent thermal stability

      Integral source-drain diode

      High input impedance and high gain

    电路图、引脚图和封装图

    在线购买

    型号制造商描述购买
    2N6660MaximIC OPAMP GP 2 CIRCUIT 8UMAX 立即购买

    应用案例更多案例

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